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www.irf.com 1 pd - 97034 hexfet ? power mosfet features of this design are a 150c junction oper- ating temperature, fast switching speed and im- proved repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. description o advanced process technology o ultra low on-resistance o 150c operating temperature o fast switching o repetitive avalanche allowed up to tjmax o some parameters are differrent from irf4905s o lead-free features irf4905spbf IRF4905LPBF v dss = -55v r ds(on) = 20m ? i d = -42a d 2 pak irf4905spbf to-262 IRF4905LPBF s d g d s d g d gds gate drain source s d g absolute maximum ratings parameter units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) a i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as (thermally limited) single pulse avalanche energy mj e as (tested ) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r jc junction-to-case ??? 0.75 r ja junction-to-ambient (pcb mount, steady state) ??? 40 -55 to + 150 300 (1.6mm from case ) 10 lbf in (1.1n m) 170 1.3 20 max. -70 -44 -280 -42 790 140 see fig.12a, 12b, 15, 16

2 www.irf.com electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage -55 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? -0.054 ??? v/c r ds(on) static drain-to-source on-resistance ??? ??? 20 m ? v gs(th) gate threshold voltage -2.0 ??? -4.0 v gfs forward transconductance 19 ??? ??? s i dss drain-to-source leakage current ??? ??? -25 a ??? ??? -200 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 q g total gate charge ??? 120 180 q gs gate-to-source charge ??? 32 ??? nc q gd gate-to-drain ("miller") charge ??? 53 ??? t d(on) turn-on delay time ??? 20 ??? t r rise time ??? 99 ??? t d(off) turn-off delay time ??? 51 ??? ns t f fall time ??? 64 ??? l s internal source inductance ??? 7.5 ??? nh between lead, and center of die contact c iss input capacitance ??? 3500 ??? c oss output capacitance ??? 1250 ??? c rss reverse transfer capacitance ??? 450 ??? pf c oss output capacitance ??? 4620 ??? c oss output capacitance ??? 940 ??? c oss eff. effective output capacitance ??? 1530 ??? source-drain ratings and characteristics parameter min. typ. max. units i s continuous source current ??? ??? -42 (body diode) a i sm pulsed source current ??? ??? -280 (body diode) v sd diode forward voltage ??? ??? -1.3 v t r r reverse recovery time ??? 61 92 ns q r r reverse recovery charge ??? 150 220 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v ds = -25v, i d = -42a i d = -42a v ds = -44v conditions v gs = -10v v gs = 0v v ds = -25v ? = 1.0mhz v gs = -20v v gs = 20v mosfet symbol showing the integral reverse p-n junction diode. t j = 25c, i s = -42a, v gs = 0v t j = 25c, i f = -42a, v dd = -28v di/dt = -100a/s conditions v gs = 0v, i d = -250a reference to 25c, i d = -1ma v gs = -10v, i d = -42a v ds = v gs , i d = -250a v ds = -55v, v gs = 0v v ds = -44v, v gs = 0v, t j = 125c v gs = 0v, v ds = -1.0v, ? = 1.0mh z v gs = 0v, v ds = -44v, ? = 1.0mhz v gs = 0v, v ds = 0v to -44v v gs = -10v v dd = -28v i d = -42a r g = 2.6 ?

www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c -4.5v vgs top -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v bottom -4.5v 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 150c -4.5v vgs top -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v bottom -4.5v 3 4 5 6 7 8 9 10 11 12 13 14 -v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 1000.0 - i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = -25v 60s pulse width t j = 25c t j = 150c 0 20406080 -i d, drain-to-source current (a) 0 10 20 30 40 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 150c v ds = -10v 380s pulse width

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 -v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 5000 6000 7000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 40 80 120 160 200 q g total gate charge (nc) 0 4 8 12 16 20 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -44v vds= -28v vds= -11v i d = -42a 0.0 0.4 0.8 1.2 1.6 2.0 -v sd , source-to-drain voltage (v) 0.1 1.0 10.0 100.0 1000.0 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 1 10 100 -v ds , drain-tosource voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc limited by package

www.irf.com 5 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. normalized on-resistance vs. temperature ri (c/w) i (sec) 0.1165 0.000068 0.3734 0.002347 0.2608 0.014811 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 - i d , d r a i n c u r r e n t ( a ) limited by package -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -42a v gs = -10v

6 www.irf.com fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit fig 14. threshold voltage vs. temperature 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -17a -30a bottom -42a -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 2.0 2.4 2.8 3.2 3.6 - v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = -250a d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v

www.irf.com 7 fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses. note: in no case should tj be allowed to exceed tjmax 0.01 25 50 75 100 125 150 starting t j , junction temperature (c) 0 40 80 120 160 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = -42a

8 www.irf.com fig 17.

for p-channel hexfet power mosfets
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? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
+ - + + + - - - ?
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# $$ ? !"!!%" fig 18a. switching time test circuit fig 18b. switching time waveforms v ds 90% 10% v gs t d(on) t r t d(off) t f &' 1 (
# 0.1 % + -

www.irf.com 9

(dimensions are shown in millimeters (inches)) rectifier int ernat ional logo lot code assembly year 0 = 2000 dat e code part number f 530s a = assembly site code week 02 p = d e s i gn at e s l e ad- f r e e product (optional) int ernat ional lot code assembly pos ition indicates "l ead-f ree" as s e mbled on ww 02, 2000 note: "p" in as s embly line in the assembly line "l" lot code 8024 t his is an irf 530s wit h rect ifier logo line l week 02 year 0 = 2000 dat e code part number f530s or

10 www.irf.com to-262 package outline (dimensions are shown in millimeters (inches)) to-262 part marking information as s e mb l y lot code rectifier international as s embled on ww 19, 1997 note: "p" in ass embly line pos i ti on i ndi cates "l ead- f r ee" in the assembly line "c" logo t his is an irl3103l lot code 1789 example: line c dat e code we e k 19 year 7 = 1997 part number part number logo lot code as s e mb l y int ernational rectifier product (optional) p = de s i gnat e s l e ad-f r e e a = as s e mb l y s i t e code week 19 ye ar 7 = 1997 dat e code or igbt 1- gate 2- collector 3- emitter 4- collector

www.irf.com 11 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/05

3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). limited by t jmax , starting t j = 25c, l = 0.16mh r g = 25 ? , i as = -42a, v gs =-10v. part not recommended for use above this value. pulse width 1.0ms; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss .
limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. this value determined from sample failure population. 100% tested to this value in production. this is applied to d 2 pak, when mounted on 1" square pcb (fr- 4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. !
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